La-modified lead titanate(PLT) thin films were prepared on Pt/SiO2/Si substrate by hot-wall type low pressure-metalorganic chemical vapor deposition(LP-MOCVD). The films were deposited at 500°C under the low pressure of 1000mTorr. The films were annealed at 650°C for 10min with O2 ambient before top-Pt electroding. Schottky emission was observed for Pt/PLT(12)/Pt capacitor. With increasing La mole%, surface morphologies of the PLT films were improved smoothly and leakage current density decreased.
No takes yet. Share an insight, caveat, or question.
Lee et al. (1995) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: