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January 1, 1990IEEE Circuits and Devices Magazine

Ferroelectric materials for 64 Mb and 256 Mb DRAMs

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Authors

LPLogan ParkerMotorola (United States)ATA.F. TaschThe University of Texas at Austin

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Parker et al. (1990) studied this question.

synapsesocial.com/papers/6a87c478f762332bf8fe7c33https://doi.org/10.1109/101.47582
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