Si surfaces chemically treated in HCl:H2O2:H2O=X:1:6 [X=1 (SC2) and 0] at 80°C have been studied using spectroscopic ellipsometry (SE). The SE data clearly indicate that both theX=1 and 0 solutions result in surface chemical oxidation. The chemical oxidation occurs immediately upon immersion of the samples in the solutions. The thickness of chemical oxide shows a saturated value of ∼9.5±1 (X=1) and ∼11.5±1 Å (X=0) against immersion timet.
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Kobayashi et al. (1994) studied this question.
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