Etching of Si wafer surface in an NH4OH:H2O2:H2O mixture (SC1 solution) is studied in regard to the effect of the composition of the solution. It is clarified that, when H2O2 concentration is constant, the etch rate increases linearly with OH- ion concentration and reaches a saturation etch rate. This saturation etch rate is inversely proportional to H2O2 concentration. Microroughness of Si surface after SC1 treatment is also investigated. It is also found that microroughness is independent of NH4OH concentration when the etch rate is kept constant.
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Kobayashi et al. (1993) studied this question.
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