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Calculation of the energy bands in diamond-type elementary semiconductors has been carried out by the KKR-Z method. The influence of the interstitial potential is considered. Relativistic corrections are calculated and a new phenomenological scheme is proposed which reproduces the experimental band structure using only one parameter. The physical significance of this angular-momentum-dependent correction and its probable explanation is discussed.
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F. Beleznay (1970) studied this question.
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