In this paper, ultrahigh-voltage (UHV) SiC devices with hybrid unipolar/bipolar operation are introduced and demonstrated. As the first step of such a device, a merged p-i-n Schottky (MPS) diode with an epitaxial p+-anode layer is proposed to reduce the conduction loss of a bipolar device in the low current region. A “snapback” phenomenon is intensively investigated by analytical modeling, device simulation, and experiment and a design guideline of snapback-free hybrid operating MPS diodes is presented. Using the design guideline, snapback-free MPS diodes are fabricated and forward characteristics are investigated. By using a proper edge termination structure, a UHV SiC MPS diode with breakdown voltage of 11.3 kV is demonstrated.
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Niwa et al. (2016) studied this question.
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