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A method of reducing reverse currents and increasing breakdown voltages without inducing negative effects on switching behavior in silicon carbide Schottky diodes is proved successfully. Implantation of p-regions in the surface of the n-drift region below the Schottky metal form face to face p-n junctions which screen the Schottky contact from high electrical fields. This results in a reduction of the reverse current and an increase of the breakdown voltage to the limit of a `pure` SiC p-n diode. It is shown, that in contrast to silicon based devices, SiC merged p-n/Schottky (MPS) rectifier preserve their excellent unipolar switching behavior. (orig.) 5 refs.
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Held et al. (1998) studied this question.