The high quality InAsSb multi‐layers have been grown on InAs substrate by Gd‐doped liquid phase epitaxy between 530 and 460°C. Compositional dependence of energy band gap and of lattice constant for epilayers were studied. The material is characterized by surface morphology observation, FTIR transmittance, photoluminescence (PL), spectro‐ellipsometry, and electrical measurements. Surface‐illuminated room temperature p‐n junction photodetectors in 3–5 μm wavelength range have been obtained.
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Kan et al. (1995) studied this question.
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