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Homoepitaxial growth of 4H-SiC(1120) and (0338) by hot-wall chemical vapor deposition has been investigated. Both the residual-donor concentration and deep-level concentrations can be reduced by increasing the C/Si ratio during growth. The optimum C/Si ratio for obtaining high-quality epilayers with good morphology is higher on the non-basal planes than on off-axis (0001). The correlation between deep levels and growth condition is discussed.
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Kimoto et al. (2003) studied this question.
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