Emitter Efficiency of Junction Transistor

After giving a brief review of the principles of the theory of the junction transistor, the emission efficiency of an efficient emitter is calculated in the electrostatic potential-imref scheme by extending the boundary conditions so as to apply to the case of the moderately high injection level. The electrostatic potential-imref diagram for this case is sketched. The obtained efficiency decrease is about one half of Webster's 2) and is the same as Rittner's 3) but the input characteristics are different from the latter.