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Hot carriers in a semiconductor lose energy by interaction with phonons. A direct measurement of the interaction in n-type InSb at liquid helium temperature has been made by application of a current pulse to a specimen and observation of the resulting change in mobility of the carriers as a function of time. When the temperature difference between the carriers and the lattice is small, the relaxation time for energy exchange is found to be of the order of 3 × 10 -7 second.
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Peskett et al. (1963) studied this question.
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