Growth and optical characterization of InAs1−xSbx(0≤x≤1) on GaAs and on GaAs-coated Si by molecular beam epitaxy

Epitaxial layers of InAs1−xSbx(0≤x≤1) have been grown on GaAs and on GaAs-coated Si substrates by molecular beam epitaxy using tetrameric Sb and dimeric As sources. Room-temperature transmission spectroscopy was used to measure the optical band gap of the InAs1−xSbx layers and the composition was determined by x-ray wavelength dispersive spectroscopy. We obtained shiny morphology InAs1−xSbx layers on GaAs-coated Si, comparable to those grown on GaAs. Our results are very encouraging towards the monolithic integration of InAs1−xSbx long-wavelength infrared detectors with Si charge-coupled devices.