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InAsSbP-InAs superlattices were grown by organometallic vapor phase epitaxial growth. The superlattice periods were obtained by X-ray diffraction measurements. The compositional depth profiles were observed by Auger electron spectroscopy and simultaneous argon-ion sputter etching. The chemical interface layer width was measured to be less than 60 A for the superlattice with a 335 A period. The results suggest that organometallic vapor phase epitaxy is one of the most useful methods for the growth of high quality superlattices.
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Fukui et al. (1980) studied this question.
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