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Light emitting diodes with peak emission at 324 nm were fabricated over low-defect density n + -Al 0.2 Ga 0.8 N buffer layers. The AlGaN buffer layers were deposited over sapphire using strain-relieving AlN/AlGaN superlattices. Pulsed powers as high as 4 mW were measured for a pump current of 900 mA.
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Chitnis et al. (2002) studied this question.
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