Monte Carlo simulations of repeated velocity overshoot structures

We have performed self-consistent Monte Carlo simulations on repeated velocity overshoot structures. From our calculations, we may assess the potential of such structures to enhance the average drift velocity of electrons. We find that there is no enhancement for uniformly doped structures. For spike-doped structures there is a small enhancement, but this is gained at the expense of a drop in current density. In both structures the velocity enhancement is limited by intervalley scattering.