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January 1, 1995Journal of Applied Physics

Admittance spectroscopy of InAlAs/InGaAs single-quantum-well structure with high concentration of electron traps in InAlAs layers

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Authors

PBP. N. BrounkovCentre National de la Recherche ScientifiqueTBT. BenyattouUniversité Claude Bernard Lyon 1GGG. GuillotWorld Health Organization

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Brounkov et al. (1995) studied this question.

synapsesocial.com/papers/6a8c4c4bcecf1efbc76384adhttps://doi.org/10.1063/1.359383
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  4. 4Transient capacitance spectroscopy on large quantum well heterostructures1983 · 57 citations
  5. 5Frequency‐Resolved Admittance Measurements on InAlAs / InGaAs / InAlAs Single‐Quantum Wells to Determine the Conduction Band Offset and the Capture Coefficient1993 · 9 citations