Answers are grounded in this paper and cite their sources.
We report on a modified Kroemer’s analysis [Appl. Phys. Lett. 36, 295 (1980)] for the determination of the band offset ΔEc of a single quantum well from a carrier profile obtained by capacitance-voltage measurement. The procedure is applied to a pseudomorphic GaAs/InGaAs/GaAs strained layer structure.
No takes yet. Share an insight, caveat, or question.
Subramanian et al. (1993) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: