Third metastable hydrogen-related level inn-type GaAs

Two bias-controlled metastable defects M3 (Ec-0.55 eV) and M4 (Ec-0.30 eV) have recently been shown to be related to hydrogen passivation of n-type GaAs. A third level, M4* (Ec-0.52 eV), is reported in hydrogen-passivated material. The M4* level forms from M3 under reverse bias, and transforms back to M3 under zero bias. The M4*{→}M3 transformation is first order with rate {ν}(T)=2.1×{}10¹⁴ exp(-0.76 eV/kT).