The passivation of deep donor centres in high-purity, liquid-phase-epitaxial n-GaAs (ND−NA = 8−10 × 1013 cm−3) by reaction with atomic hydrogen has been observed using deep-level transient spectroscopy. Exposure to the hydrogen plasma for 3 h at 300°C neutralised 99% of the deep levels to a depth of approximately 7 μm.
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Pearton et al. (1982) studied this question.
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