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The sheet carrier concentration (two-dimensional electron gas (2DEG), at the AlGaAs/GaAs interface is analytically modelled with its dependence on temperature (from liquid nitrogen temperature to room temperature and higher) and aluminium composition, at equilibrium and for charge control by the gate. The effect of deep-donor concentration is also taken into account and a decrease in the 2DEG is observed at higher concentrations of deep donors and at higher temperatures. The theoretical analysis, based on Fermi-Dirac statistics, shows that the thermal characterization of the 2DEG is essential. The results obtained are compared with experimental data.
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Sen et al. (1999) studied this question.
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