Resistivity of thin bismuth films under in-plane tensile strain

The unique properties of bismuth and bismuth-antimony have attracted extensive attention in scope of strain engineering and straintronics in 2D materials in the past few decades. In this work we tested the technique of measurement of electric properties of bismuth films on glass and silicon substrates deformed by dome bending method. The obtained results show fine agreement with the investigation of films deformed by others techniques and can be used to model in-plane tensile deformation. Considering the use of two substrates of silicon and borosilicate glass, the method makes it possible to obtain continuously changed deformation of film in range up to 0.8 % of relative change of area at room temperature.