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In the case of gap modulated semiconductor, a theoretical treatment is given for the differential reflection coefficient relative to transitions with an excitonic character. The influence of the various parameters is shown by means of a serie of calculated theoretical curves. Satisfactory agreement between theory and experiment is obtained with samples of undoped p‐type GaSb and degenerate n‐type GaSb. In the first case a pronounced excitonic effect is observed and the excitonic relaxation time is determined for temperatures between 300 and 80 ° K. In the second case, the high density of free carriers screens the interaction potential between electrons and holes and piezoreflectance curves without excitons are obtained.
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Camassel et al. (1970) studied this question.
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