Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing

Low-energy (18 keV) phosphorus ion implantation and rapid thermal annealing at 650 °C for 120 s were used to create point defects and promote intermixing in InAs∕InP quantum stick structures grown by molecular beam epitaxy. With these soft conditions for ion-implantation-induced intermixing, photoluminescence measurements at low temperature show a very large blueshift up to 350 nm and a narrow emission linewidth (down to 30 nm for ion dose equal to 5×1013cm−2). The band gap tuning limit in this system was evaluated using implantation of phosphorus ions at various doses (1×1011–5×1014cm−2), at a temperature of 200 °C followed by rapid thermal annealing.