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The development of photonic integrated circuits lattice matched to GaAs are desirable for the manufacture of high-power, high-efficiency optical components. In this letter we investigate and describe a process technique based on quantum-well intermixing to achieve multiple band edges in the Al-free 980nm InGaAs∕InGaAsP∕InGaP material system.
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Skogen et al. (2005) studied this question.
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