A novel iteration scheme for the self-consistent solution of the Schrodinger-Poisson system in semiconductor devices is presented. The information from the eigenvalue problem is used to obtain a nonlinear Poisson equation that can be solved with the Newton method. The scheme has good stability properties and fast convergence. Examples are presented for the one-dimensional (1-D) calculation of quantized states in surface-channel and buried-channel MOS devices.
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A. Pacelli (1997) studied this question.
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