Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R◻∼10kΩ at low temperatures, with carrier mobility exceeding 1000cm2∕Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR∕dT>0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control.
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Nakamura et al. (2006) studied this question.
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