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The temperature dependence, over the 4.2–100 K range, of the narrow EPR line, labeled X, with an isotropic value of g = 2.002 has been investigated in a semi-insulating GaAs:Cr sample. From its Curie-Weiss behavior, leading to a (T+13.1)−1 law, it is concluded that it may result from antiferromagnetic exchange coupled spins, originating from dangling bonds located on extended defects present in the crystal.
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Goltzené et al. (1982) studied this question.
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