Identification of sulfur double donors in 4H-, 6H-, and 3C-silicon carbide

Sulfur ions are implanted into 6H-, 4H-, and 3C-SiC. Admittance and double correlated deep level transient spectroscopy investigations reveal that S atoms form double donors in SiC, which reside on lattice sites. The number of double donors observed corresponds to the number of inequivalent lattice sites of the particular SiC polytype. The temperature dependence of the electron capture cross section is determined by the filling pulse method. It is shown that the capture of electrons into S donors is dominated by the cascade mechanism.