This paper presents two types of resistive switching effects observed in metal/insulator/metal heterostructures: one is the forced‐switch type, and the other is the memory‐switch type. The former was observed in metal/semi‐insulating GaAs hybrid structures. The nonlinear resistive switch showed a strong magnetic field dependence at room temperature. The latter, described in this report, appears in the Pt/Co oxide/Pt capacitor structures. The resistive switch showed bistability, which is certainly a phenomenon with great promise of application to nonvolatile solid state electronic memory. For both cases, the recent experimental evidences show that the electronic state of the interface between the metal electrode and the insulator plays a crucial role in the resistive switching effect.
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Akinaga et al. (2007) studied this question.
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