The most common electron trap in nitrogen doped GaP (0.45 eV below the conduction band) was studied in detail. It was established that the trap concentration quadratically depends on the N concentration and nearly linearly on the net donor concentration. Recombination enhanced anneal of this trap is accompanied by an increase of the nearest-neighbor nitrogen pair luminescence. A tentative model is suggested to identify this trap as a nitrogen split interstitial pair on phosphorous site.
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Ferenczi et al. (1983) studied this question.
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