Carrier distribution in multiple quantum well (MQW) lasers is studied by measuring laser wavelength. The MQW is designed to contain wells with different thicknesses. The MQW laser wavelength agreed with the transition wavelength of the wells near the p-clad layer at room temperature. At low temperatures, however, the laser wavelength corresponded to the thicker wells. The results imply that hole localization takes place at room temperature but disappears at low temperatures. This shows the invalidity of the conventional capture/escape model. The importance of the mean free path of unbound carriers is pointed out.
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Yamazaki et al. (1997) studied this question.
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