Solid Source Dry Etching Process for GaAs and InP

In this study, we have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP and GaAs using either solid iodine or ICl3 powder as gas sources at a low process temperature of 90 °C. We prepared solid iodine crystal and ICl3 powder in the ICP etching chamber as etching gas sources in a process chamber. Iodine or chlorine gases were supplied with a high vapor pressure from the solid source into the process chamber. Vertical and smooth etching was realized under a condition of low temperature and low bias RF power. We believe that solid iodine- and ICl3 powder-ICP etching are very simple and useful processes for InP- and GaAs-based device fabrication with a resist mask.