We investigated the inductively coupled plasma etching of InP-based materials for photonic-crystal (PC) device fabrication. By optimizing bias power and gas pressure, circular holes with a diameter of <0.2 µm, a depth of 2.0 µm and a maximum aspect ratio of 13 were formed with an e -beam resist mask. This technique was applied to the fabrication of PC-slab devices, and a single-point-defect PC laser was demonstrated at room temperature.
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Ide et al. (2006) studied this question.
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