The fabrication and characterisation of deeply-etched single-mode GeSi rib waveguides, grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of ∼2.5±1dB/cm at 1.3μm.
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Liu et al. (1992) studied this question.
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