Design, Modeling, Testing, and Spice Parameter Extraction of Dimos Transistor in 4h-Silicon Carbide

In this paper, an analytical model for a vertical double implanted metal-oxide semiconductor (DIMOS) transistor structure in 4H-Silicon Carbide ( SiC ) is presented. Simulation for transport characteristics of the SiC MOSFET with the exact device geometry is carried out using the commercial device simulator MEDICI. A rigorous experimental testing and characterization is done on a 4H- SiC DIMOS transistor test device. SPICE parameters are extracted from the measurements, and a SPICE model for the DIMOS transistor has been developed. The presented work is a part of team efforts of material, device, and power electronics researchers at the University of Tennessee and Oak Ridge National Laboratory.