Laser calorimetry has been used to study intensity-dependent absorption processes in semiconductors at 1.06 and 1.318 μm. New measurements of two-photon absorption and two-photon-excited free carriers are reported. Saturation of the one-photon absorption has been observed and evidence is presented for a pulse width dependence of the two-photon absorption.
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Stewart et al. (1980) studied this question.
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