Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers

Tensile-strained GaAsP/GaInAsP/GaInP separate-confinement-heterostructure single-quantum-well (SCH-SQW) lasers are reported for the first time. A low threshold current density of 261 A/cm2and a high characteristic temperature of 190 K were obtained for a 1600-μm long broad-area laser having /spl sim/0.3% lattice strain. The internal quantum efficiency was as high as 93% and internal waveguide loss 3.3 cm/sup /spl minus/1/. Some primary results of unstrained GaAs/GaInAsP and compressive-strained (1.4%) InGaAs/GaInAsP SCH-SQW lasers are also presented. Both the tensile and compressive-strained lasers exhibited higher quantum efficiency than the unstrained lasers. On the other hand, the tensile-strained lasers had nearly the same internal waveguide loss and threshold current as the unstrained lasers.