To examine the facet heating behavior, high-power InGaAsP/GaAs laser diodes were fabricated with the epitaxial layers by liquid phase epitaxy (LPE) growth onto the moving substrate. It is shown that the facet temperature rise of the InGaAsP/GaAs laser diode has been kept lower than 30°C even above 500 mW. The kinematic model in which the presence of phosphorus oxide with a high heat of formation preserves the relatively low surface recombination rate at the mirror facet of the InGaAs/GaAs laser is proposed.
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Yoo et al. (1992) studied this question.
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