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Semiconducting single wall carbon nanotubes (SWCNTs) exhibit high electron mobility in low electric field. Tube diameter and temperature have been found to strongly affect transport properties of SWCNTs. We have investigated electron mobility of helically coiled carbon nanotubes (HCCNTs). Electron and phonon band structures of HCCNTs are used in calculation of electron-phonon matrix elements. Scattering rates are calculated using the first order perturbation theory while taking care of energy and momentum conservation law. In order to obtain electron drift velocities, steady state simulation of charge transport is performed using Monte Carlo method.
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Popović et al. (2015) studied this question.
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