Avalanche breakdown voltages were determined for a series of In0.53Ga0.47As p-i-n diodes with i-region thicknesses ranging from 0.4 to 4.79 μm using measurements of reverse dark current and phase-sensitive photomultiplication. Despite its narrower bandgap In0.53Ga0.47As is found to have a very similar breakdown voltage to GaAs.
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Ng et al. (2002) studied this question.
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