Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 1, 1980Applied Physics Letters

Impact ionization rates for electrons and holes in Ga0.47In0.53As

View Full Paper
Ask AI
Bookmark
Share

Authors

TPT. P. PearsallNorthwestern University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

T. P. Pearsall (1980) studied this question.

synapsesocial.com/papers/6a6f2d3d2163a0a01bc382c3https://doi.org/10.1063/1.91431
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ultimate low-loss single-mode fibre at 1.55 μm1979 · 657 citations
  2. 2Impact ionisation ratio in In <sub>0.73</sub> Ga <sub>0.27</sub> As <sub>0.57</sub> P <sub>0.43</sub>1978 · 36 citations
  3. 3The effect of substrate orientation on the liquid-solid distribution coefficients for Ga<i>x</i>In1−<i>x</i>As in the temperature range 600–700 °C1979 · 43 citations
  4. 4Signal and noise response of high speed germanium avalanche photodiodes1966 · 158 citations
  5. 5Dispersion minimisation in single-mode fibres between 1.3 μm and 1.7 μm1979 · 22 citations