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A window structure InGaAsP avalanche photodiode (a.p.d.) has been fabricated by using liquid-phase epitaxy on (111B) InP. Multiplication characteristics show that the impact ionisation rate for electrons is larger than that for holes (α>β). The ionisation ratio α/β was estimated to be 3–4. A low-noise a.p.d. will be realised by a structure with electron-initiated multiplication.
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Ito et al. (1978) studied this question.
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