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May 1, 1995IEEE Transactions on Electron Devices

Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

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Authors

CMCheng MaHuazhong Agricultural UniversityMDM. Jamal DeenMcMaster UniversityLTL.E. TarofSdPhotonics (United States)

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Implication

Experimental study reveals linear temperature dependence of breakdown voltage in InP/InGaAs avalanche photodiodes, indicating the broad utility of the physical model for device design.

Key Points

  • Investigate how breakdown voltage changes with temperature in SAGCM InP/InGaAs avalanche photodiodes and formulate a predictive physical model.
  • Measured breakdown voltage across temperatures from -40 to 110 °C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes with varying device parameters.
  • Constructed a physical analytical model to describe the temperature dependence of breakdown voltage and compared results with both internal device measurements and published data on InP-based photodiodes.
  • Observed that breakdown voltage increases linearly with temperature, demonstrating an experimental temperature coefficient between 0.13 and 0.16 V/°C across tested devices.
  • Yielded a theoretical temperature coefficient of approximately 0.155 V/°C from the physical model, closely matching experimental observations and explaining minor parameter-driven variations among individual devices.

Cite This Study

Ma et al. (1995) studied this question.

synapsesocial.com/papers/6a8d1262c9fcfbd7f79067dfhttps://doi.org/10.1109/16.381974
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery1990 · 70 citations
  2. 2High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes1993 · 81 citations
  3. 3Impact ionization rates for electrons and holes in Ga0.47In0.53As1980 · 114 citations
  4. 4A physics-based fitting and extrapolation method for measured impact ionization coefficients in III-V semiconductors1992 · 34 citations
  5. 5Characteristics in InGaAs/InP avalanche photodiodes with separated absorption and multiplication regions1981 · 54 citations