Measurements with Gunn oscillators made from epitaxial layers of the ternary InGaAs lattice matched to InP are reported. Operation in the domain mode was chosen. First results are given demonstrating the potential of this alloy for high-efficiency Gunn devices.
No takes yet. Share an insight, caveat, or question.
Kowalsky et al. (1984) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: