Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm^-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm^-1 reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.
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Karimov et al. (2003) studied this question.
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