Theoretical results of electron transport in n-type In0.52Al0.48As are presented. The transport properties of this important semiconductor were obtained using the Monte Carlo method. In particular, velocity-electric field characteristics for different temperatures and doping concentrations in bulk In0.52Al0.48As are calculated for the first time. Physical parameters for In0.52Al0.48As (which is lattice-matched to InP and In0.53Ga0.47As) were obtained based on interpolation of available experimental and theoretical results for InAs, AlAs, and In0.75Al0.25As. Our study suggests that In0.52Al0.48As has electron transport properties which are comparable to and complimentary with those of other materials lattice-matched to InP.
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Kim et al. (1992) studied this question.
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