AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE

This is the authors' abstract. We don't add key points for this paper.

Low-temperature AlInAs buffer layers incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE are discussed. A growth temperature of 150 degrees C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic and sidegating and to reduce the output conductance dramatically.>