Low-temperature epitaxy enhances electron mobility in InP-based HEMTs with strained InGaAs channels, implying better device performance.
Low‐temperature metal‐organic vapor‐phase epitaxy growth of strained InGaAs channel in InP‐based high electron mobility transistors (HEMTs) is investigated using trimethylindium, triethylgallium, and arsine as precursors. Lowering the growth temperature is crucial for suppressing lattice relaxation and increasing the channel In content up to 0.9. To control the composition of In‐rich InGaAs, the nonlinear relationship between the solid and vapor composition should be taken into account. We successfully fabricate InP HEMT structures with an In 0.9 Ga 0.1 As channel where electron mobility of around 14,000 cm 2 V −1 s −1 at a sheet‐carrier concentration of around 2.5 × 10 12 cm −2 is obtained.
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Sugiyama et al. (2026) studied this question.
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