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The effect of rapid thermal annealing and sulfur passivation on the quality of reactively sputtered SiO2 on InAs were investigated. Results show that both rapid thermal processing and sulfur passivation cause a reduction in leakage current and oxide fixed charges. Annealing at temperature higher than 400 °C caused degradation. Also passivation started to loose its effectiveness when structures are annealed at 500 °C.
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G. Eftekhari (1997) studied this question.
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