VCSEL chip structure and packaging optimization design for high-power VCSEL light source modules

The demand for high-power, high-density VCSEL light sources in applications such as space, artificial intelligence, silicon photonics, and autonomous vehicles is steadily increasing. VCSEL chips are epitaxially grown on GaAs substrates and then packaged by attaching them to a mounting bracket using high-temperature-resistant adhesives. This issue limits the VCSEL’s output power, and restricts its application range. We propose first removing the VCSEL epitaxial layer from the GaAs substrate and transferring it to a CuW substrate. The VCSEL chip is then mounted on an AlN substrate using a metal eutectic bonding technique. The results indicate that bonding 36 VCSELs with a wavelength of 840 nm to CuW chips and mounting them onto an AlN substrate to form an array achieved voltage of 8.59 V and a driving current of 18 A. The output optical power reached 57.68 W, with a reduced packaging thermal resistance of 0.232 K/W.